t4 - lds - 0253, rev . 1 (1 20 632 ) ?201 2 microsemi corporation page 1 of 8 1n6909 u tk 3 as and 1n6909 u tk 3 cs available on commercial versions 200 volts,150 amps low reverse leakage schottky diode screening in reference to mil - prf - 19500 available description th e 1n6909utk 3 as device polarity is anode - to - strap (standard) and is also available optionally in 1n6909utk3cs as cathode - to - strap. this part can also be ordered in a strapless version. u p- screening for high - reliability applications is also available . microsemi also offers numerous other products to meet higher and lower power voltage regulati on applications. thinkey tm 3 package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n 6909 . ? oxide passivated structure. ? guard ring protection for increased reverse energy capability. ? epitaxial structure minimizes forward voltage drop. ? hermetically sealed, low profile ceramic surface mount power package. ? up - screening available in reference to mil - prf - 19500 (see part nomenclature for all available options). ? rohs compliant versions available (commercial grade only) . applications / benefits ? low package inductance . ? very low thermal resistan ce . ? a lso a vailable with no strap as 1n6909utk3 by special request. ? mechanically rugged . m axim um ratings @ t c = +25 c, unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 tel : 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit junction and storage temperature range t j and t stg - 65 to +150 c thermal resistance, junction to case ( anode - to - strap ) r ? jc 0. 20 c/w thermal resistance, junction to case ( cathode - to - strap , also applicable to strapless option ) r ? jc 0.35 c/w peak repetitive reverse voltage v rrm 200 v working peak reverse voltage v rw m 200 v dc blocking voltage v r 2 00 v average rectified forward current, t c 125 c i f( a ve) 150 a derating, forward current, t c 1 25 c dl f / dt 4 a/c non - repetitive peak surge current ( tp = 8.3 ms, half sine - wave ) i fsm 2000 a peak repetitive reverse surge current ( tp = 1 s, f = 1 khz ) i rrm 2 a downloaded from: http:///
t4 - lds - 0253, rev . 1 (1 20 632 ) ?201 2 microsemi corporation page 2 of 8 1n6909 u tk 3 as and 1n6909 u tk 3 cs mechanical and packaging ? case: ceramic -m olybdenum thinkey 3. ? terminals: snpb s older or rohs compliant m atte/ t in (on commercial grade only) coated. ? marking: part number and p olarity s ym bol . ? polarity: standard is a node to s trap. reverse is c athode to s trap . ? weight: approximately 1.7 grams. ? see package dimensions on last page. part nomenclature mq 1n6909 u tk 3 as (e3) reliability level mq (reference jan) mx (reference jantx) mv ( reference jantxv) blank = commercial jedec type number ( see electrical characteristic s t able ) surface mount package rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant polarity as= anode to strap (standard) cs=cathode - to - strap blank=no strap package level package class symbols & definitions symbol definition f frequency i f forward current, dc i r reverse current, dc t c case temperature t p pul se time v r reverse voltage, dc downloaded from: http:///
t4 - lds - 0253, rev . 1 (1 20 632 ) ?201 2 microsemi corporation page 3 of 8 1n6909 u tk 3 as and 1n6909 u tk 3 cs electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min typ max unit reverse (leakage) current v r = 200 v, tc = 25 c i r25 75 100 a v r = 200 v, tc = +125 c i r125 1 5 ma forward voltage pulse test, p ulse width = 300 s; d uty cycle 2% i f = 10 a, t c = 25 c v f1 650 700 mv i f = 50 a, t c = 25 c v f2 750 760 mv i f = 100 a, t c = 25 c v f3 825 850 mv i f = 150 a, t c = 25 c v f4 850 900 mv i f = 200 a, t c = 2 5 c v f7 910 - mv i f = 100 a, t c = - 55 c v f5 860 950 mv i f = 150 a, t c = +125 c v f6 700 800 mv junction capacitance v r = 10 v c j1 1800 3200 pf v r = 5 v c j2 3000 pf breakdown voltage i r = 1 ma, t c = 25 c b vr 200 220 v i r = 1 ma, t c = - 55 c 200 205 v downloaded from: http:///
t4 - lds - 0253, rev . 1 (1 20 632 ) ?201 2 microsemi corporation page 4 of 8 1n6909 u tk 3 as and 1n6909 u tk 3 cs graphs v f (volts) figure 1 schottky v f C i f characteristics i f (amps) downloaded from: http:///
t4 - lds - 0253, rev . 1 (1 20 632 ) ?201 2 microsemi corporation page 5 of 8 1n6909 u tk 3 as and 1n6909 u tk 3 cs graphs (continued) v r (volts) figure 2 schottky v r vs i r i r (amps) downloaded from: http:///
t4 - lds - 0253, rev . 1 (1 20 632 ) ?201 2 microsemi corporation page 6 of 8 1n6909 u tk 3 as and 1n6909 u tk 3 cs graphs (continued) v r (volts) figure 3 v r vs total capacitance (t j = 25 oc) capacitance (pf) downloaded from: http:///
t4 - lds - 0253, rev . 1 (1 20 632 ) ?201 2 microsemi corporation page 7 of 8 1n6909 u tk 3 as and 1n6909 u tk 3 cs package dimen sions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. see pad layout on next page. dimensions ltr inch millimeters min max min max bl .420 .440 10.67 11.18 bt .115 2.92 blt .125 3.18 c .469 .509 11.91 12.93 e .03 8 nom . 97 nom f .331 .341 8.41 8.66 lc .040 nom 1.02 nom lf .055 .075 1.40 1.91 lt .005 .015 .127 .3 81 lw .185 .215 4.70 5.46 downloaded from: http:///
t4 - lds - 0253, rev . 1 (1 20 632 ) ?201 2 microsemi corporation page 8 of 8 1n6909 u tk 3 as and 1n6909 u tk 3 cs pad layout downloaded from: http:///
|
